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STTA1212D
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 12A 1200V 50 ns 2.0 V
K
FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY.
K
A
TO-220AC
DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 30 160 100 - 65 to + 150 150 Unit V A A A C C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes.
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5B
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STTA1212D
THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 12A =0.5 Tc= 95C Tc= 89C Test conditions Value 1.9 29.2 32.1 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Vto Rd
Test pulses :
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test conditions IF =12A VR =0.8 x VRRM Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min
Typ 1.35 0.8
Max 2.2 2.0 100 5.0 1.57 36
Unit V V A mA V m
Ip < 3.IF(AV) Tj = 125C
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/s VR =30V Tj = 125C VR = 600V dIF/dt = -96 A/s dIF/dt = -500 A/s IF =12A 18 30 / 1.2 Min Typ 50 100 A Max Unit ns
IRM
S factor
Tj = 125C VR = 600V IF = 12A dIF/dt = -500 A/s
TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25C IF =12 A, dIF/dt = 96 A/s measured at 1.1 x VFmax Tj = 25C IF =12A, dIF/dt = 96 A/s IF =40A, dIF/dt = 500 A/s Min Typ Max 900 V 30 40 Unit ns
VFp
Peak forward voltage
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STTA1212D
Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A)
= 0.1 = 0.2 = 0.5
P1(W) 30 25 20 15 10 5 IF(av) (A) 0 0 2 4 6 8 10 12 14
1.0
=1
100.0
Tj=125C
10.0
VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 50 40 30
VR=600V Tj=125C IF=2*IF(av) IF=IF(av)
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
= 0.5
0.4 0.2
= 0.2 = 0.1 Single pulse
20 10
tp(s) 1E-2 1E-1 1E+0
IF=0.5*IF(av)
dIF/dt(A/s)
0 0 100 200 300 400 500
0.0 1E-4
1E-3
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 500 450 400 350 300 250 200 150 100 50 0
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values).
S factor 1.40
VR=600V Tj=125C IF=2*IF(av)
IF<2*IF(av)
VR=600V Tj=125C
1.20
IF=IF(av)
1.00
IF=0.5*IF(av)
dIF/dt(A/s)
0 100 200 300 400 500
dIF/dt(A/s)
0.80 0 100 200 300 400 500
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STTA1212D
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V)
1.1
S factor
70 60 50 40
IRM
IF=IF(av) Tj=125C
1.0
0.9
30 20 10
0.8 Tj(C) 0.7 25 50 75 100 125
dIF/dt(A/s)
0 0 100 200 300 400 500
Fig. 9: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 600 500 400 300 200
VFR=1.1*VF max. IF=IF(av) Tj=125C
dIF/dt(A/s)
100 0 100 200 300 400 500
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STTA1212D
APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the tansistor due to the diode
Fig. A : "FREEWHEEL" MODE.
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
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STTA1212D
Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM tp T = tp/T
F = 1/T
Fig. D : RECTIFIER DIODE.
STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vt0 . IF(AV) + Rd . IF2(RMS) Reverse losses : P2 = VR . IR . (1 - )
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STTA1212D
APPLICATION DATA (Cont'd) Fig. F: TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x ( 3 + 2 x S ) x F 6 x dIF dt VR x IRM x IL x ( S + 2 ) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR trr = ta + tb I dI F /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
Turn-off losses (in the diode) : P3 =
VR x IRM 2 x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : (with non negligible serial inductance) P3' =
VR x IRM 2 x S x F + 6 x dIF dt L x IRM 2 x F 2
P3,P3' and P5 are suitable for powerMOSFET and IGBT
Fig. G: TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
0 VF V Fp
t
Turn-on losses : P4 = 0.4 (VFP - VF) . IFmax . tfr . F
1.1V F 0 tfr
VF t
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STTA1212D
PACKAGE DATA TO-220AC (JEDEC outline) DIMENSIONS REF.
H2 C L5 OI L6 L2 D L7 A
Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00
Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409
A C D E F F1 G H2 L2 L4
M E
L9 F1 L4
16.40 typ. 13.00 14.00 2.65 15.25 6.20 3.50 3.75 2.95 15.75 6.60 3.93 3.85
0.645 typ. 0.511 0.551 0.104 0.600 0.244 0.137 0.147 0.116 0.620 0.259 0.154 0.151
F G
L5 L6 L7 L9 M Diam. I
2.6 typ.
0.102 typ.
Ordering type STTA1212D
Marking STTA1212D
Package TO-220AC
Weight 1.86g
Base qty 50
Delivery mode Tube
Cooling method: by conduction (C) Recommended torque value: 0.55 N.m. Maximum torque value: 0.70 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

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